Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC050N04LS G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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BD 0.215
Each (On a Reel of 5000) (Exc. Vat)
BD 0.237
Each (On a Reel of 5000) (Including VAT)
5000
BD 0.215
Each (On a Reel of 5000) (Exc. Vat)
BD 0.237
Each (On a Reel of 5000) (Including VAT)
5000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
85 A
Maximum Drain Source Voltage
40 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC050N04LS G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V