Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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BD 0.265
Each (On a Reel of 5000) (Exc. Vat)
BD 0.291
Each (On a Reel of 5000) (Including VAT)
5000
BD 0.265
Each (On a Reel of 5000) (Exc. Vat)
BD 0.291
Each (On a Reel of 5000) (Including VAT)
5000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
11.3 A
Maximum Drain Source Voltage
200 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
6.35mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5.35mm
Height
1.1mm
Series
BSC12DN20NS3 G
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V