Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
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BD 379.225
BD 37.922 Each (In a Tray of 10) (Exc. Vat)
BD 417.147
BD 41.714 Each (In a Tray of 10) (inc. VAT)
10
BD 379.225
BD 37.922 Each (In a Tray of 10) (Exc. Vat)
BD 417.147
BD 41.714 Each (In a Tray of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Tray |
|---|---|---|
| 10 - 40 | BD 37.922 | BD 379.225 |
| 50+ | BD 37.196 | BD 371.965 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products