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Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1

RS Stock No.: 262-5850PBrand: InfineonManufacturers Part No.: IPB014N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.400

Each (Supplied on a Reel) (Exc. Vat)

BD 0.440

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.000
10BD 4.000
15BD 6.000
20BD 8.000
25BD 10.000
30BD 12.000
35BD 14.000
40BD 16.000
45BD 18.000
50BD 20.000
55BD 22.000
60BD 24.000
65BD 26.000
70BD 28.000
75BD 30.000

BD 0.400

Each (Supplied on a Reel) (Exc. Vat)

BD 0.440

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 191 A, 40 V, 3-Pin PG-TO263-3 Infineon IPB014N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.000
10BD 4.000
15BD 6.000
20BD 8.000
25BD 10.000
30BD 12.000
35BD 14.000
40BD 16.000
45BD 18.000
50BD 20.000
55BD 22.000
60BD 24.000
65BD 26.000
70BD 28.000
75BD 30.000

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

191 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more