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Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1

RS Stock No.: 262-5857Brand: InfineonManufacturers Part No.: IPB023N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 3.990

BD 0.798 Each (In a Pack of 5) (Exc. Vat)

BD 4.389

BD 0.878 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.990
10BD 7.980
15BD 11.970
20BD 15.960
25BD 19.950
30BD 23.940
35BD 27.930
40BD 31.920
45BD 35.910
50BD 35.438
55BD 38.981
60BD 42.525
65BD 46.069
70BD 49.612
75BD 53.156

BD 3.990

BD 0.798 Each (In a Pack of 5) (Exc. Vat)

BD 4.389

BD 0.878 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 122 A, 40 V, 3-Pin PG-TO263-3 IPB023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 3.990
10BD 7.980
15BD 11.970
20BD 15.960
25BD 19.950
30BD 23.940
35BD 27.930
40BD 31.920
45BD 35.910
50BD 35.438
55BD 38.981
60BD 42.525
65BD 46.069
70BD 49.612
75BD 53.156

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.798BD 3.990
50 - 120BD 0.709BD 3.544
125 - 245BD 0.667BD 3.334
250 - 495BD 0.635BD 3.176
500+BD 0.598BD 2.992

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

122 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more