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Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1

RS Stock No.: 262-5863PBrand: InfineonManufacturers Part No.: IPD028N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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BD 0.530

Each (Supplied on a Reel) (Exc. Vat)

BD 0.583

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 5
50BD 26.500
55BD 29.150
60BD 31.800
65BD 34.450
70BD 37.100
75BD 39.750
80BD 42.400
85BD 45.050
90BD 47.700
50BD 26.500
55BD 29.150
60BD 31.800
65BD 34.450
70BD 37.100
75BD 39.750

BD 0.530

Each (Supplied on a Reel) (Exc. Vat)

BD 0.583

Each (Supplied on a Reel) (inc. VAT)

Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 5
50BD 26.500
55BD 29.150
60BD 31.800
65BD 34.450
70BD 37.100
75BD 39.750
80BD 42.400
85BD 45.050
90BD 47.700
50BD 26.500
55BD 29.150
60BD 31.800
65BD 34.450
70BD 37.100
75BD 39.750

Buy in bulk

quantityUnit pricePer Reel
50 - 120BD 0.530BD 2.650
125 - 245BD 0.495BD 2.475
250 - 495BD 0.470BD 2.350
500+BD 0.365BD 1.825

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

139 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more