Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China
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BD 0.360
Each (In a Pack of 20) (Exc. Vat)
BD 0.396
Each (In a Pack of 20) (Including VAT)
Standard
20
BD 0.360
Each (In a Pack of 20) (Exc. Vat)
BD 0.396
Each (In a Pack of 20) (Including VAT)
Standard
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | BD 0.360 | BD 7.200 |
100 - 180 | BD 0.280 | BD 5.600 |
200 - 480 | BD 0.260 | BD 5.200 |
500 - 980 | BD 0.245 | BD 4.900 |
1000+ | BD 0.230 | BD 4.600 |
Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China