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Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF

RS Stock No.: 220-7481Brand: InfineonManufacturers Part No.: IRFH3707TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0124 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

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BD 0.070

Each (In a Pack of 50) (Exc. Vat)

BD 0.077

Each (In a Pack of 50) (inc. VAT)

Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 3.500
100BD 7.000
150BD 10.500
200BD 14.000
250BD 17.500
300BD 21.000
350BD 24.500
400BD 28.000
450BD 31.500
500BD 35.000
550BD 38.500
600BD 42.000
650BD 45.500
700BD 49.000
750BD 52.500

BD 0.070

Each (In a Pack of 50) (Exc. Vat)

BD 0.077

Each (In a Pack of 50) (inc. VAT)

Dual N-Channel MOSFET Transistor & Diode, 12 A, 30 V, 8-Pin PQFN 3 x 3 Infineon IRFH3707TRPBF
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 3.500
100BD 7.000
150BD 10.500
200BD 14.000
250BD 17.500
300BD 21.000
350BD 24.500
400BD 28.000
450BD 31.500
500BD 35.000
550BD 38.500
600BD 42.000
650BD 45.500
700BD 49.000
750BD 52.500

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0124 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more