Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.260
Each (In a Pack of 10) (Exc. Vat)
BD 0.286
Each (In a Pack of 10) (Including VAT)
10
BD 0.260
Each (In a Pack of 10) (Exc. Vat)
BD 0.286
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.260 | BD 2.600 |
50 - 90 | BD 0.235 | BD 2.350 |
100 - 240 | BD 0.225 | BD 2.250 |
250 - 490 | BD 0.205 | BD 2.050 |
500+ | BD 0.190 | BD 1.900 |
Technical Document
Specifications
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
10 to 18mA
Maximum Drain Source Voltage
20 V
Maximum Drain Gate Voltage
20V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Width
1.4mm
Maximum Operating Temperature
+150 °C
Length
3mm
Height
1mm
Country of Origin
China
Product details
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.