Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
2.92 x 1.4 x 0.94mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.94mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.055
Each (Supplied on a Reel) (Exc. Vat)
BD 0.061
Each (Supplied on a Reel) (Including VAT)
25
BD 0.055
Each (Supplied on a Reel) (Exc. Vat)
BD 0.061
Each (Supplied on a Reel) (Including VAT)
25
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Idss Drain-Source Cut-off Current
min. 10mA
Maximum Drain Source Voltage
15 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
18 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
85pF
Source Gate On-Capacitance
85pF
Dimensions
2.92 x 1.4 x 0.94mm
Maximum Operating Temperature
+150 °C
Length
2.92mm
Height
0.94mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Product details
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.