N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002LT1G
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
BD 2.250
BD 0.045 Each (In a Pack of 50) (Exc. Vat)
BD 2.475
BD 0.049 Each (In a Pack of 50) (inc. VAT)
Standard
50
BD 2.250
BD 0.045 Each (In a Pack of 50) (Exc. Vat)
BD 2.475
BD 0.049 Each (In a Pack of 50) (inc. VAT)
Standard
50
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 450 | BD 0.045 | BD 2.250 |
| 500 - 950 | BD 0.020 | BD 1.000 |
| 1000 - 2450 | BD 0.020 | BD 1.000 |
| 2500 - 4950 | BD 0.020 | BD 1.000 |
| 5000+ | BD 0.020 | BD 1.000 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
115 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.9mm
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
0.94mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products