Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
50 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
3.5 W
Minimum DC Current Gain
560
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
330 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.5 x 2.5 x 1.5mm
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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BD 0.110
Each (On a Reel of 1000) (Exc. Vat)
BD 0.121
Each (On a Reel of 1000) (Including VAT)
1000
BD 0.110
Each (On a Reel of 1000) (Exc. Vat)
BD 0.121
Each (On a Reel of 1000) (Including VAT)
1000
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
50 V
Package Type
PCP
Mounting Type
Surface Mount
Maximum Power Dissipation
3.5 W
Minimum DC Current Gain
560
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
330 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.5 x 2.5 x 1.5mm
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.