Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
10 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
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BD 80.000
BD 0.040 Each (Supplied as a Tape) (Exc. Vat)
BD 88.000
BD 0.044 Each (Supplied as a Tape) (inc. VAT)
2000
BD 80.000
BD 0.040 Each (Supplied as a Tape) (Exc. Vat)
BD 88.000
BD 0.044 Each (Supplied as a Tape) (inc. VAT)
2000
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
10 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm