Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
22
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V dc
Maximum Emitter Base Voltage
12 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China
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BD 0.445
Each (In a Tube of 50) (Exc. Vat)
BD 0.489
Each (In a Tube of 50) (inc. VAT)
50
BD 0.445
Each (In a Tube of 50) (Exc. Vat)
BD 0.489
Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
10 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
75 W
Minimum DC Current Gain
22
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V dc
Maximum Emitter Base Voltage
12 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.53 x 4.83 x 15.75mm
Country of Origin
China