Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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BD 0.245
Each (In a Pack of 10) (Exc. Vat)
BD 0.269
Each (In a Pack of 10) (Including VAT)
10
BD 0.245
Each (In a Pack of 10) (Exc. Vat)
BD 0.269
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | BD 0.245 | BD 2.450 |
20 - 40 | BD 0.155 | BD 1.550 |
50 - 90 | BD 0.135 | BD 1.350 |
100 - 190 | BD 0.115 | BD 1.150 |
200+ | BD 0.115 | BD 1.150 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
20 to 40mA
Maximum Drain Source Voltage
25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Common Source
Configuration
Dual
Mounting Type
Surface Mount
Package Type
CPH
Pin Count
6
Drain Gate On-Capacitance
6pF
Source Gate On-Capacitance
2.3pF
Dimensions
2.9 x 1.6 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Height
0.9mm
Width
1.6mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.