Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS Stock No.: 780-0605Brand: onsemiManufacturers Part No.: NTJD1155LT1G
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Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Pin Count

6

Transistor Configuration

N+P Loadswitch

Maximum Gate Threshold Voltage

1V

Maximum Drain Source Voltage

8 V

Mounting Type

Surface Mount

Maximum Operating Temperature

+150 °C

Maximum Gate Source Voltage

+8 V

Width

1.35mm

Height

1mm

Length

2.2mm

Maximum Continuous Drain Current

1.3 A

Package Type

SOT-363

Maximum Power Dissipation

400 mW

Batteries

3 x AAA Battery

Maximum Drain Source Resistance

320 mΩ

Product details

S6SAE101A00SA1002 Solar-Powered IoT Device Kit, Cypress

The Solar-Powered Internet-of-Things (IoT) Device Kit provides Bluetooth Low Energy (BLE) wireless connectivity for the development of a solar-powered IoT application. The Energy Harvesting Motherboard with the solar panel connected powers the Bluetooth Low Energy (BLE) communication. Data are transmitted with ambient light as low as 200 lx. Also supports the use of a coin cell battery.
A BLE-to-USB Bridge board, that is pre-programmed plugs into the USB port of a computer. Software provided by Cypress, are ready for use example applications.
The I²C-bus temperature and humidity sensors on-board offer environmental real-time data.

Kit Contents

Energy Harvesting Motherboard
S6AE101A, Low-power Energy Harvesting PMIC
CYBLE-022001-00, EZ-BLE PRoC Module (Bluetooth Smart)
CY7C65213, USB-UART LP Bridge Controller
MB39C022G, Low Dropout Regulator
Bluetooth Low Energy BLE-to-USB Bridge
Solar Module
USB Standard Type-A to Mini-B cable
Quick Start Guide
Two jumper wires, 220 μF Capacitor and 10 Ω Resistor

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BD 0.075

Each (Supplied as a Tape) (Exc. Vat)

BD 0.083

Each (Supplied as a Tape) (Including VAT)

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 1.500
40BD 3.000
60BD 4.500
80BD 6.000
100BD 7.500
120BD 9.000
140BD 10.500
160BD 12.000
180BD 13.500
200BD 15.000
220BD 16.500
240BD 18.000
260BD 19.500
280BD 21.000
300BD 22.500

BD 0.075

Each (Supplied as a Tape) (Exc. Vat)

BD 0.083

Each (Supplied as a Tape) (Including VAT)

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20BD 1.500
40BD 3.000
60BD 4.500
80BD 6.000
100BD 7.500
120BD 9.000
140BD 10.500
160BD 12.000
180BD 13.500
200BD 15.000
220BD 16.500
240BD 18.000
260BD 19.500
280BD 21.000
300BD 22.500

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

2

Channel Type

N, P

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Pin Count

6

Transistor Configuration

N+P Loadswitch

Maximum Gate Threshold Voltage

1V

Maximum Drain Source Voltage

8 V

Mounting Type

Surface Mount

Maximum Operating Temperature

+150 °C

Maximum Gate Source Voltage

+8 V

Width

1.35mm

Height

1mm

Length

2.2mm

Maximum Continuous Drain Current

1.3 A

Package Type

SOT-363

Maximum Power Dissipation

400 mW

Batteries

3 x AAA Battery

Maximum Drain Source Resistance

320 mΩ

Product details

S6SAE101A00SA1002 Solar-Powered IoT Device Kit, Cypress

The Solar-Powered Internet-of-Things (IoT) Device Kit provides Bluetooth Low Energy (BLE) wireless connectivity for the development of a solar-powered IoT application. The Energy Harvesting Motherboard with the solar panel connected powers the Bluetooth Low Energy (BLE) communication. Data are transmitted with ambient light as low as 200 lx. Also supports the use of a coin cell battery.
A BLE-to-USB Bridge board, that is pre-programmed plugs into the USB port of a computer. Software provided by Cypress, are ready for use example applications.
The I²C-bus temperature and humidity sensors on-board offer environmental real-time data.

Kit Contents

Energy Harvesting Motherboard
S6AE101A, Low-power Energy Harvesting PMIC
CYBLE-022001-00, EZ-BLE PRoC Module (Bluetooth Smart)
CY7C65213, USB-UART LP Bridge Controller
MB39C022G, Low Dropout Regulator
Bluetooth Low Energy BLE-to-USB Bridge
Solar Module
USB Standard Type-A to Mini-B cable
Quick Start Guide
Two jumper wires, 220 μF Capacitor and 10 Ω Resistor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more