Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Country of Origin
Thailand
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
BD 4.016
BD 0.268 Each (In a Pack of 15) (Exc. Vat)
BD 4.418
BD 0.295 Each (In a Pack of 15) (inc. VAT)
15
BD 4.016
BD 0.268 Each (In a Pack of 15) (Exc. Vat)
BD 4.418
BD 0.295 Each (In a Pack of 15) (inc. VAT)
15
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
15 - 360 | BD 0.268 | BD 4.016 |
375 - 735 | BD 0.236 | BD 3.544 |
750 - 1485 | BD 0.231 | BD 3.465 |
1500 - 2985 | BD 0.226 | BD 3.386 |
3000+ | BD 0.226 | BD 3.386 |
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Package Type
TSMT
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Height
0.95mm
Country of Origin
Thailand
Product details