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SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120

RS Stock No.: 202-5476Brand: STMicroelectronicsManufacturers Part No.: SCT10N120
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

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BD 4.165

BD 4.165 Each (Exc. Vat)

BD 4.581

BD 4.581 Each (inc. VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.165
2BD 8.330
3BD 12.495
4BD 16.660
5BD 20.825
6BD 24.990
7BD 29.155
8BD 33.320
9BD 37.485
10BD 41.650
11BD 45.815
12BD 49.980
13BD 54.145
14BD 58.310
15BD 62.475

BD 4.165

BD 4.165 Each (Exc. Vat)

BD 4.581

BD 4.581 Each (inc. VAT)

SiC N-Channel MOSFET Module, 12 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCT10N120
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.165
2BD 8.330
3BD 12.495
4BD 16.660
5BD 20.825
6BD 24.990
7BD 29.155
8BD 33.320
9BD 37.485
10BD 41.650
11BD 45.815
12BD 49.980
13BD 54.145
14BD 58.310
15BD 62.475

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

1200 V

Package Type

Hip247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.58 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more