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SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

RS Stock No.: 202-5487Brand: STMicroelectronicsManufacturers Part No.: SCTW35N65G2VAG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 198.750

BD 6.625 Each (In a Tube of 30) (Exc. Vat)

BD 218.625

BD 7.287 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG

30

Available in multiples of 30
30BD 198.750
60BD 397.500
90BD 596.250
120BD 795.000
150BD 993.750
180BD 1,192.500
210BD 1,391.250
240BD 1,590.000
270BD 1,788.750
300BD 1,987.500
330BD 2,186.250
360BD 2,385.000
390BD 2,583.750
420BD 2,782.500
450BD 2,981.250

BD 198.750

BD 6.625 Each (In a Tube of 30) (Exc. Vat)

BD 218.625

BD 7.287 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW35N65G2VAG
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 198.750
60BD 397.500
90BD 596.250
120BD 795.000
150BD 993.750
180BD 1,192.500
210BD 1,391.250
240BD 1,590.000
270BD 1,788.750
300BD 1,987.500
330BD 2,186.250
360BD 2,385.000
390BD 2,583.750
420BD 2,782.500
450BD 2,981.250

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more