Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V
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BD 1.275
Each (In a Pack of 5) (Exc. Vat)
BD 1.403
Each (In a Pack of 5) (Including VAT)
Standard
5
BD 1.275
Each (In a Pack of 5) (Exc. Vat)
BD 1.403
Each (In a Pack of 5) (Including VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 5 | BD 1.275 | BD 6.375 |
10 - 95 | BD 1.085 | BD 5.425 |
100 - 495 | BD 0.845 | BD 4.225 |
500 - 995 | BD 0.715 | BD 3.575 |
1000+ | BD 0.595 | BD 2.975 |
Technical Document
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Pin Count
3
Maximum Gate Source Voltage
-30 V, +30 V
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
3V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Width
4.6mm
Maximum Power Dissipation
35 W
Package Type
TO-220FP
Maximum Continuous Drain Current
10 A
Length
10.4mm
Height
9.3mm
Maximum Drain Source Resistance
750 mΩ
Brand
STMicroelectronicsTypical Gate Charge @ Vgs
50 nC @ 10 V