Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V
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BD 0.140
Each (In a Pack of 25) (Exc. Vat)
BD 0.154
Each (In a Pack of 25) (Including VAT)
25
BD 0.140
Each (In a Pack of 25) (Exc. Vat)
BD 0.154
Each (In a Pack of 25) (Including VAT)
25
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
25 - 50 | BD 0.140 | BD 3.500 |
75 - 125 | BD 0.120 | BD 3.000 |
150 - 475 | BD 0.105 | BD 2.625 |
500+ | BD 0.100 | BD 2.500 |
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V