Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.350
Each (In a Pack of 10) (Exc. Vat)
BD 0.385
Each (In a Pack of 10) (Including VAT)
10
BD 0.350
Each (In a Pack of 10) (Exc. Vat)
BD 0.385
Each (In a Pack of 10) (Including VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.350 | BD 3.500 |
100 - 240 | BD 0.250 | BD 2.500 |
250 - 490 | BD 0.235 | BD 2.350 |
500 - 740 | BD 0.220 | BD 2.200 |
750+ | BD 0.220 | BD 2.200 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Product details