Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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BD 0.590
Each (Supplied on a Reel) (Exc. Vat)
BD 0.649
Each (Supplied on a Reel) (Including VAT)
5
BD 0.590
Each (Supplied on a Reel) (Exc. Vat)
BD 0.649
Each (Supplied on a Reel) (Including VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | BD 0.590 | BD 2.950 |
50 - 95 | BD 0.475 | BD 2.375 |
100 - 245 | BD 0.360 | BD 1.800 |
250 - 495 | BD 0.340 | BD 1.700 |
500+ | BD 0.325 | BD 1.625 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
145 A
Maximum Drain Source Voltage
40 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details