Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
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BD 3.120
BD 1.560 Each (In a Pack of 2) (Exc. Vat)
BD 3.432
BD 1.716 Each (In a Pack of 2) (inc. VAT)
2
BD 3.120
BD 1.560 Each (In a Pack of 2) (Exc. Vat)
BD 3.432
BD 1.716 Each (In a Pack of 2) (inc. VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.560 | BD 3.120 |
10 - 18 | BD 1.160 | BD 2.320 |
20 - 48 | BD 1.150 | BD 2.300 |
50 - 98 | BD 1.130 | BD 2.260 |
100+ | BD 1.130 | BD 2.260 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
30.8 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Series
DTMOSIV
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
88 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
230 W
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
65 nC @ 10 V
Width
4.45mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details