Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
24.1 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C
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BD 0.160
Each (On a Reel of 3000) (Exc. Vat)
BD 0.176
Each (On a Reel of 3000) (Including VAT)
3000
BD 0.160
Each (On a Reel of 3000) (Exc. Vat)
BD 0.176
Each (On a Reel of 3000) (Including VAT)
3000
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
24.1 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
1.07mm
Minimum Operating Temperature
-55 °C