Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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BD 1.060
Each (In a Pack of 2) (Exc. Vat)
BD 1.166
Each (In a Pack of 2) (Including VAT)
Standard
2
BD 1.060
Each (In a Pack of 2) (Exc. Vat)
BD 1.166
Each (In a Pack of 2) (Including VAT)
Standard
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | BD 1.060 | BD 2.120 |
20 - 98 | BD 0.900 | BD 1.800 |
100 - 198 | BD 0.785 | BD 1.570 |
200 - 498 | BD 0.645 | BD 1.290 |
500+ | BD 0.510 | BD 1.020 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.05 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details