Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
BD 2.008
BD 0.402 Each (In a Pack of 5) (Exc. Vat)
BD 2.209
BD 0.442 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 2.008
BD 0.402 Each (In a Pack of 5) (Exc. Vat)
BD 2.209
BD 0.442 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.402 | BD 2.008 |
50+ | BD 0.341 | BD 1.705 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
450 mA
Maximum Drain Source Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Maximum Operating Temperature
+150 °C
Height
4.95mm
Minimum Operating Temperature
-55 °C
Product details