Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
BD 1.430
BD 0.143 Each (In a Pack of 10) (Exc. Vat)
BD 1.573
BD 0.157 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 1.430
BD 0.143 Each (In a Pack of 10) (Exc. Vat)
BD 1.573
BD 0.157 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | BD 0.143 | BD 1.430 |
100 - 240 | BD 0.138 | BD 1.375 |
250 - 490 | BD 0.132 | BD 1.320 |
500 - 990 | BD 0.126 | BD 1.265 |
1000+ | BD 0.121 | BD 1.210 |
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6000 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.9 x 1.3mm
Maximum Operating Temperature
+150 °C
Product details