Infineon OptiMOS™ 5 N-Channel MOSFET, 100 A, 40 V, 8-Pin TDSON BSC010N04LSATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
95 nC @ 10V
Maximum Operating Temperature
+150 °C
Width
5.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.1mm
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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BD 8.250
BD 0.825 Each (In a Pack of 10) (Exc. Vat)
BD 9.075
BD 0.907 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 8.250
BD 0.825 Each (In a Pack of 10) (Exc. Vat)
BD 9.075
BD 0.907 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | BD 0.825 | BD 8.250 |
| 50 - 90 | BD 0.786 | BD 7.865 |
| 100 - 240 | BD 0.754 | BD 7.535 |
| 250 - 490 | BD 0.726 | BD 7.260 |
| 500+ | BD 0.682 | BD 6.820 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ 5
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.1mm
Typical Gate Charge @ Vgs
95 nC @ 10V
Maximum Operating Temperature
+150 °C
Width
5.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
1.1mm
Product details
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products