Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
890 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Maximum Power Dissipation
20 mW
Configuration
Dual
Mounting Type
Panel Mount
Country of Origin
Hungary
Stock information temporarily unavailable.
BD 163.251
BD 163.251 Each (Exc. Vat)
BD 179.576
BD 179.576 Each (inc. VAT)
Infineon FF900R12ME7WBPSA1 Dual IGBT Module, 890 A 1200 V, Panel Mount
1
BD 163.251
BD 163.251 Each (Exc. Vat)
BD 179.576
BD 179.576 Each (inc. VAT)
Infineon FF900R12ME7WBPSA1 Dual IGBT Module, 890 A 1200 V, Panel Mount
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
890 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Number of Transistors
2
Maximum Power Dissipation
20 mW
Configuration
Dual
Mounting Type
Panel Mount
Country of Origin
Hungary