Infineon IKW25N120H3FKSA1 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
326 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1430pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.3mJ
Product details
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 5.060
BD 2.530 Each (In a Pack of 2) (Exc. Vat)
BD 5.566
BD 2.783 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 5.060
BD 2.530 Each (In a Pack of 2) (Exc. Vat)
BD 5.566
BD 2.783 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 4 | BD 2.530 | BD 5.060 |
| 6 - 18 | BD 2.184 | BD 4.367 |
| 20 - 38 | BD 2.106 | BD 4.213 |
| 40 - 98 | BD 2.046 | BD 4.092 |
| 100+ | BD 1.788 | BD 3.575 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
326 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Minimum Operating Temperature
-40 °C
Gate Capacitance
1430pF
Maximum Operating Temperature
+175 °C
Energy Rating
4.3mJ
Product details
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products