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Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1

RS Stock No.: 284-729Brand: InfineonManufacturers Part No.: IMT65R072M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.751

BD 4.751 Each (Exc. Vat)

BD 5.226

BD 5.226 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.751
2BD 9.502
3BD 14.254
4BD 19.005
5BD 23.756
6BD 28.508
7BD 33.259
8BD 38.010
9BD 42.761
10BD 43.785
11BD 48.164
12BD 52.542
13BD 56.920
14BD 61.299
15BD 65.678

BD 4.751

BD 4.751 Each (Exc. Vat)

BD 5.226

BD 5.226 Each (inc. VAT)

Infineon SiC N-Channel MOSFET, 36 A, 650 V, 8-Pin PG-HSOF-8 IMT65R072M1HXUMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 4.751
2BD 9.502
3BD 14.254
4BD 19.005
5BD 23.756
6BD 28.508
7BD 33.259
8BD 38.010
9BD 42.761
10BD 43.785
11BD 48.164
12BD 52.542
13BD 56.920
14BD 61.299
15BD 65.678

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 9BD 4.751
10 - 99BD 4.378
100 - 499BD 4.121
500 - 999BD 3.901
1000+BD 3.580

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more