Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 42.625
BD 0.852 Each (In a Tube of 50) (Exc. Vat)
BD 46.887
BD 0.937 Each (In a Tube of 50) (inc. VAT)
50
BD 42.625
BD 0.852 Each (In a Tube of 50) (Exc. Vat)
BD 46.887
BD 0.937 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.852 | BD 42.625 |
100 - 200 | BD 0.720 | BD 36.025 |
250 - 450 | BD 0.688 | BD 34.375 |
500 - 950 | BD 0.644 | BD 32.175 |
1000+ | BD 0.610 | BD 30.525 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si