Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
BD 8.910
BD 0.891 Each (In a Pack of 10) (Exc. Vat)
BD 9.801
BD 0.980 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 8.910
BD 0.891 Each (In a Pack of 10) (Exc. Vat)
BD 9.801
BD 0.980 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 10 | BD 0.891 | BD 8.910 |
20 - 40 | BD 0.847 | BD 8.470 |
50 - 90 | BD 0.808 | BD 8.085 |
100 - 240 | BD 0.786 | BD 7.865 |
250+ | BD 0.742 | BD 7.425 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.225 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si