Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1

RS Stock No.: 262-5855Brand: InfineonManufacturers Part No.: IPB018N06NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 4.730

BD 0.946 Each (In a Pack of 5) (Exc. Vat)

BD 5.203

BD 1.041 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.730
10BD 9.460
15BD 14.190
20BD 18.920
25BD 21.312
30BD 25.575
35BD 29.838
40BD 34.100
45BD 38.362
50BD 39.875
55BD 43.862
60BD 47.850
65BD 51.838
70BD 55.825
75BD 59.812

BD 4.730

BD 0.946 Each (In a Pack of 5) (Exc. Vat)

BD 5.203

BD 1.041 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 4.730
10BD 9.460
15BD 14.190
20BD 18.920
25BD 21.312
30BD 25.575
35BD 29.838
40BD 34.100
45BD 38.362
50BD 39.875
55BD 43.862
60BD 47.850
65BD 51.838
70BD 55.825
75BD 59.812

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
5 - 20BD 0.946BD 4.730
25 - 45BD 0.852BD 4.262
50 - 120BD 0.798BD 3.988
125 - 245BD 0.754BD 3.768
250+BD 0.704BD 3.520

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

187 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more