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Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1

RS Stock No.: 262-5865Brand: InfineonManufacturers Part No.: IPD029N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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Stock information temporarily unavailable.

BD 2.392

BD 0.478 Each (In a Pack of 5) (Exc. Vat)

BD 2.631

BD 0.526 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.392
10BD 4.785
15BD 7.178
20BD 9.570
25BD 11.962
30BD 14.355
35BD 16.748
40BD 19.140
45BD 21.532
50BD 21.450
55BD 23.595
60BD 25.740
65BD 27.885
70BD 30.030
75BD 32.175

BD 2.392

BD 0.478 Each (In a Pack of 5) (Exc. Vat)

BD 2.631

BD 0.526 Each (In a Pack of 5) (inc. VAT)

Infineon Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5BD 2.392
10BD 4.785
15BD 7.178
20BD 9.570
25BD 11.962
30BD 14.355
35BD 16.748
40BD 19.140
45BD 21.532
50BD 21.450
55BD 23.595
60BD 25.740
65BD 27.885
70BD 30.030
75BD 32.175

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 45BD 0.478BD 2.392
50 - 120BD 0.429BD 2.145
125 - 245BD 0.402BD 2.008
250 - 495BD 0.380BD 1.898
500+BD 0.198BD 0.990

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more