Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si
BD 8.415
BD 0.561 Each (In a Pack of 15) (Exc. Vat)
BD 9.257
BD 0.617 Each (In a Pack of 15) (inc. VAT)
Standard
15
BD 8.415
BD 0.561 Each (In a Pack of 15) (Exc. Vat)
BD 9.257
BD 0.617 Each (In a Pack of 15) (inc. VAT)
Standard
15
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
15 - 60 | BD 0.561 | BD 8.415 |
75 - 135 | BD 0.534 | BD 8.002 |
150+ | BD 0.484 | BD 7.260 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
40 V
Series
OptiMOS™ -T2
Package Type
SuperSO8 5 x 6 Dual
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0082 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Number of Elements per Chip
2
Transistor Material
Si