Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mO
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
63 nC @ 10 V
Length
10.54mm
Maximum Operating Temperature
+175 °C
Height
8.77mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
BD 4.455
BD 0.891 Each (In a Pack of 5) (Exc. Vat)
BD 4.901
BD 0.980 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.455
BD 0.891 Each (In a Pack of 5) (Exc. Vat)
BD 4.901
BD 0.980 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | BD 0.891 | BD 4.455 |
50 - 120 | BD 0.820 | BD 4.098 |
125 - 245 | BD 0.770 | BD 3.850 |
250 - 495 | BD 0.726 | BD 3.630 |
500+ | BD 0.693 | BD 3.465 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
55 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.5 mO
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.69mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
63 nC @ 10 V
Length
10.54mm
Maximum Operating Temperature
+175 °C
Height
8.77mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.