Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 24 A, 150 V, 3-Pin DPAK IRFR24N15DTRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2
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BD 539.000
BD 0.270 Each (On a Reel of 2000) (Exc. Vat)
BD 592.900
BD 0.297 Each (On a Reel of 2000) (inc. VAT)
2000
BD 539.000
BD 0.270 Each (On a Reel of 2000) (Exc. Vat)
BD 592.900
BD 0.297 Each (On a Reel of 2000) (inc. VAT)
2000
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Please check again later.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 2000 - 2000 | BD 0.270 | BD 539.000 |
| 4000+ | BD 0.253 | BD 506.000 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
150 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.095 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
30V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products