Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
BD 22.000
BD 0.440 Each (In a Tube of 50) (Exc. Vat)
BD 24.200
BD 0.484 Each (In a Tube of 50) (inc. VAT)
50
BD 22.000
BD 0.440 Each (In a Tube of 50) (Exc. Vat)
BD 24.200
BD 0.484 Each (In a Tube of 50) (inc. VAT)
50
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Please check again later.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | BD 0.440 | BD 22.000 |
100 - 450 | BD 0.352 | BD 17.600 |
500 - 950 | BD 0.302 | BD 15.125 |
1000+ | BD 0.258 | BD 12.925 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China