Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 2.38 x 6.22mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
BD 23.925
BD 0.319 Each (In a Tube of 75) (Exc. Vat)
BD 26.317
BD 0.351 Each (In a Tube of 75) (inc. VAT)
75
BD 23.925
BD 0.319 Each (In a Tube of 75) (Exc. Vat)
BD 26.317
BD 0.351 Each (In a Tube of 75) (inc. VAT)
75
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | BD 0.319 | BD 23.925 |
150 - 300 | BD 0.302 | BD 22.688 |
375+ | BD 0.297 | BD 22.275 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-8 A
Maximum Collector Emitter Voltage
-80 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Maximum Power Dissipation
20 W
Minimum DC Current Gain
60
Transistor Configuration
Single
Maximum Collector Base Voltage
10 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
20 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 2.38 x 6.22mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.