Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
BD 29.865
BD 0.996 Each (In a Tube of 30) (Exc. Vat)
BD 32.851
BD 1.096 Each (In a Tube of 30) (inc. VAT)
30
BD 29.865
BD 0.996 Each (In a Tube of 30) (Exc. Vat)
BD 32.851
BD 1.096 Each (In a Tube of 30) (inc. VAT)
30
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | BD 0.996 | BD 29.865 |
90 - 210 | BD 0.798 | BD 23.925 |
240 - 480 | BD 0.770 | BD 23.100 |
510 - 960 | BD 0.732 | BD 21.945 |
990+ | BD 0.644 | BD 19.305 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.