STMicroelectronics STripFET H7 N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 3.938
BD 1.969 Each (In a Pack of 2) (Exc. Vat)
BD 4.332
BD 2.166 Each (In a Pack of 2) (inc. VAT)
Standard
2
BD 3.938
BD 1.969 Each (In a Pack of 2) (Exc. Vat)
BD 4.332
BD 2.166 Each (In a Pack of 2) (inc. VAT)
Standard
2
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 1.969 | BD 3.938 |
| 10 - 98 | BD 1.683 | BD 3.366 |
| 100 - 498 | BD 1.496 | BD 2.992 |
| 500+ | BD 1.480 | BD 2.959 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
STripFET H7
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
180 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products