Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT

RS Stock No.: 133-0154Brand: Texas InstrumentsManufacturers Part No.: CSD19502Q5BT
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

BD 2.134

BD 1.067 Each (In a Pack of 2) (Exc. Vat)

BD 2.347

BD 1.174 Each (In a Pack of 2) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
Select packaging type

BD 2.134

BD 1.067 Each (In a Pack of 2) (Exc. Vat)

BD 2.347

BD 1.174 Each (In a Pack of 2) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP CSD19502Q5BT
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
2 - 8BD 1.067BD 2.134
10 - 18BD 1.018BD 2.035
20 - 48BD 0.930BD 1.859
50 - 98BD 0.858BD 1.716
100+BD 0.830BD 1.661

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

157 A

Maximum Drain Source Voltage

80 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

195 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

130 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more