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Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T

RS Stock No.: 236-3573Brand: ToshibaManufacturers Part No.: SSM3J356R,LF(T
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4e+008 Ω

Maximum Gate Threshold Voltage

2V

Transistor Material

Silicon

Number of Elements per Chip

1

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Stock information temporarily unavailable.

BD 3.938

BD 0.079 Each (In a Pack of 50) (Exc. Vat)

BD 4.332

BD 0.087 Each (In a Pack of 50) (inc. VAT)

Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 3.938
100BD 7.350
150BD 11.025
200BD 14.700
250BD 18.375
300BD 22.050
350BD 25.725
400BD 29.400
450BD 33.075
500BD 36.750
550BD 40.425
600BD 44.100
650BD 47.775
700BD 51.450
750BD 55.125

BD 3.938

BD 0.079 Each (In a Pack of 50) (Exc. Vat)

BD 4.332

BD 0.087 Each (In a Pack of 50) (inc. VAT)

Toshiba Silicon P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50BD 3.938
100BD 7.350
150BD 11.025
200BD 14.700
250BD 18.375
300BD 22.050
350BD 25.725
400BD 29.400
450BD 33.075
500BD 36.750
550BD 40.425
600BD 44.100
650BD 47.775
700BD 51.450
750BD 55.125

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
50 - 50BD 0.079BD 3.938
100 - 200BD 0.074BD 3.675
250 - 450BD 0.074BD 3.675
500 - 950BD 0.074BD 3.675
1000+BD 0.068BD 3.412

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

4e+008 Ω

Maximum Gate Threshold Voltage

2V

Transistor Material

Silicon

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more