Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Country of Origin
Japan
BD 4.510
BD 0.451 Each (In a Pack of 10) (Exc. Vat)
BD 4.961
BD 0.496 Each (In a Pack of 10) (inc. VAT)
Standard
10
BD 4.510
BD 0.451 Each (In a Pack of 10) (Exc. Vat)
BD 4.961
BD 0.496 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | BD 0.451 | BD 4.510 |
50 - 90 | BD 0.412 | BD 4.125 |
100 - 990 | BD 0.319 | BD 3.190 |
1000+ | BD 0.204 | BD 2.035 |
Technical Document
Specifications
Brand
ToshibaChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
27 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +10 V
Number of Elements per Chip
1
Width
7mm
Length
6.5mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Automotive Standard
AEC-Q101
Country of Origin
Japan