Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
BD 5.500
BD 0.275 Each (In a Pack of 20) (Exc. Vat)
BD 6.050
BD 0.303 Each (In a Pack of 20) (inc. VAT)
Standard
20
BD 5.500
BD 0.275 Each (In a Pack of 20) (Exc. Vat)
BD 6.050
BD 0.303 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | BD 0.275 | BD 5.500 |
200 - 480 | BD 0.231 | BD 4.620 |
500 - 980 | BD 0.220 | BD 4.400 |
1000 - 1980 | BD 0.209 | BD 4.180 |
2000+ | BD 0.198 | BD 3.960 |
Technical Document
Specifications
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Product details