Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.11 kW
Configuration
Series
Package Type
M276
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 54.000
Each (Exc. Vat)
BD 59.400
Each (Including VAT)
1
BD 54.000
Each (Exc. Vat)
BD 59.400
Each (Including VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | BD 54.000 |
2 - 4 | BD 47.860 |
5 - 9 | BD 43.400 |
10 - 19 | BD 41.155 |
20+ | BD 40.945 |
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
240 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
1.11 kW
Configuration
Series
Package Type
M276
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
108 x 62 x 30.5mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.