Fuji Electric 7MBR75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 24-Pin M712, PCB Mount
Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
275 W
Package Type
M712
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 63.035
Each (Exc. Vat)
BD 69.339
Each (Including VAT)
1
BD 63.035
Each (Exc. Vat)
BD 69.339
Each (Including VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 63.035 |
| 2 - 4 | BD 57.630 |
| 5 - 9 | BD 56.110 |
| 10 - 19 | BD 54.670 |
| 20+ | BD 53.865 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
Fuji ElectricMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
275 W
Package Type
M712
Configuration
3 Phase Bridge
Mounting Type
PCB Mount
Channel Type
N
Pin Count
24
Transistor Configuration
3 Phase
Dimensions
122 x 62 x 17mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products