Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

RS Stock No.: 349-212Brand: InfineonManufacturers Part No.: AIMBG75R090M1HXTMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

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Stock information temporarily unavailable.

BD 3.778

BD 3.778 Each (Exc. Vat)

BD 4.156

BD 4.156 Each (inc. VAT)

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1

BD 3.778

BD 3.778 Each (Exc. Vat)

BD 4.156

BD 4.156 Each (inc. VAT)

Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
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Stock information temporarily unavailable.

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QuantityUnit price
1 - 9BD 3.778
10 - 99BD 3.492
100 - 499BD 3.306
500 - 999BD 3.135
1000+BD 2.893

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

750 V

Series

AIM

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more